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Veeco Instruments Inc. (NASDAQ:VECO) has signed a joint development project (JDP) agreement with imec, a nano-electronics research centre. The collaboration is intended to accelerate the development of Gallium Nitride (GaN) based, power electronic devices using GaN Epi wafers built with Veeco’s Propel® Power GaN MOCVD system.
Veeco Instruments Inc. (NASDAQ:VECO) has signed a joint development project (JDP) agreement with imec, a nano-electronics research centre. The collaboration is intended to accelerate the development of Gallium Nitride (GaN) based, power electronic devices using GaN Epi wafers built with Veeco’s Propel® Power GaN MOCVD system.
According to the press release:
Imec has already demonstrated significant gains in GaN layer uniformity and run-to-run repeatability with Veeco’s Propel system, resulting in significantly improved power device yields. The single wafer reactor incorporates Veeco’s proprietary TurboDisc® technology that delivers superior film uniformity, run-to-run control and defect levels compared to batch reactors.
“Within the framework of our industrial affiliation program on GaN-on-Si, Veeco and imec have collaborated over the last four years to improve the Epi quality of GaN layers deposited on silicon wafer substrates,” said Rudi Cartuyvels, Senior Vice President Smart Systems and Energy Technologies at imec. “The ultimate goal is to produce the next generation of highly efficient power switching devices. We have set very high GaN device yield and reliability targets for 2016 and we look forward to partnering with Veeco to achieve these targets.”
Click here to read the full press release.
