Novellus Develops New DirectFill CVD tungsten nitride (WN) Process

- May 7th, 2010

Novellus Systems (NVLS) has announced the development of innovative DirectFill CVD tungsten nitride (WN) liner-barrier film which will be used instead of the physical vapor deposition (PVD) Ti liner and metallo-organic chemical vapor deposition (MOCVD) TiN barrier film stack.
Aaron Fellis, associate vice president and general manager of the Direct Metals business unit said, “DirectFill WN […]

Novellus Systems (NVLS) has announced the development of innovative DirectFill CVD tungsten nitride (WN) liner-barrier film which will be used instead of the physical vapor deposition (PVD) Ti liner and metallo-organic chemical vapor deposition (MOCVD) TiN barrier film stack.

Aaron Fellis, associate vice president and general manager of the Direct Metals business unit said, “DirectFill WN technology provides our customers with an advanced tungsten barrier film for memory applications that eliminates the integration issues associated with conventional PVD Ti – MOCVD TiN liner-barrier films. The superior step coverage and integration performance of this new WN film enables our customers to extend the performance of their copper interconnects to the 3Xnm technology node and beyond.”

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Novellus Systems, Inc. (NASDAQ: NVLS) is a leading provider of advanced process equipment for the global semiconductor industry. An S&P 500 company, Novellus is headquartered in San Jose, Calif. with subsidiary offices across the globe.

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